Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-04-23
1999-10-12
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257316, 257344, H01L 29788
Patent
active
059659157
ABSTRACT:
A laser doping process comprising: irradiating a laser beam operated in a pulsed mode to a single crystal semiconductor substrate of a first conductive type in an atmosphere of an impurity gas which imparts the semiconductor substrate a conductive type opposite to said first conductive type and incorporating the impurity contained in said impurity gas into the surface of said semiconductor substrate, thereby modifying the type and/or the intensity of the conductive type thereof. Provides devices having a channel length of 0.5 .mu.m or less and impurity regions 0.1 .mu.m or less in depth.
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Takemura Yasuhiko
Yamazaki Shunpei
Munson Gene M.
Robinson Eric J
Semiconductor Energy Laboratory Co,. Ltd.
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