Laser processing method for wafer

Details Laser processing method for wafer Laser processing method for wafer

2006-07-05

2009-06-09

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

Having specified scribe region structure

C438S463000, C438S707000, C257SE21599

Reexamination Certificate

active

07544588

ABSTRACT:
Disclosed herein is a laser processing method for a wafer having a plurality of regions defined by streets, with the regions having a plurality of devices formed therein. The method irradiates the wafer with a laser beam along the streets, thereby forming laser processed grooves along the streets. It includes a processed groove formation step of irradiating the wafer while positioning the beam's focus spot on an irradiation surface of the wafer, thereby forming the laser processed grooves; and a processed groove finishing step of irradiating the wafer along the laser processed grooves formed by the processed groove formation step, while positioning the focus spot beyond the bottom of the laser processed grooves, thereby finishing both sides of the laser processed grooves.

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