Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of... – Compound semiconductor
Reexamination Certificate
2006-01-31
2006-01-31
Thompson, Craig A. (Department: 2813)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
Compound semiconductor
C438S795000, C438S007000, C438S463000, C700S121000
Reexamination Certificate
active
06992026
ABSTRACT:
A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed.
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Fukumitsu Kenshi
Fukuyo Fumitsugu
Uchiyama Naoki
Wakuda Toshimitsu
Drinker Biddle & Reath LLP
Hamamatsu Photonics K.K.
Thompson Craig A.
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