Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1995-07-20
1999-07-13
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438166, 438479, 438487, H01L 2100, H01L 2120
Patent
active
059239662
ABSTRACT:
A laser processing apparatus provides a heating chamber, a chamber for laser light irradiation and a robot arm, wherein a temperature of a substrate on which a silicon film to be irradiated with laser light is formed is heated to 450 to 750.degree. C. in the heating chamber followed by irradiating the silicon film with laser light so that a silicon film having a single crystal or a silicon film that can be regarded as the single crystal can be obtained.
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Hamatani Toshiji
Miyanaga Akiharu
Ohtani Hisashi
Teramoto Satoshi
Yamazaki Shunpei
Lebentritt Michael S.
Niebling John F.
Robinson Eric J.
Semiconductor Energy Laboratory Co,. Ltd.
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