Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2007-02-20
2007-02-20
Kebede, Brook (Department: 2823)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S795000
Reexamination Certificate
active
10367831
ABSTRACT:
A laser processing process which comprises laser annealing a silicon film 2 μm or less in thickness by irradiating a laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more, and preferably, 100 nsec or more.A laser processing apparatus which comprises a laser generation device and a stage for mounting thereon a sample provided separately from said device, to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.
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Adachi Hiroki
Ohnuma Hideto
Tanaka Nobuhiro
Kebede Brook
Nguyen Khiem
Robinson Eric J.
Robinson Intellectual Property Law Office, P. C.
Semiconductor Energy Laboratory Co,. Ltd.
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