Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1996-10-30
1999-04-06
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438160, 438162, 438166, H01L 2100, H01L 2184
Patent
active
058917640
ABSTRACT:
A laser processing process which comprises laser annealing a silicon film 2 .mu.m or less in thickness by irradiating a laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more, and preferably, 100 nsec or more.
A laser processing apparatus which comprises a laser generation device and a stage for mounting thereon a sample provided separately from said device, to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.
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Adachi Hiroki
Ishihara Hiroaki
Nakashita Kazuhisa
Ohnuma Hideto
Tanaka Nobuhiro
Ferguson Jr. Gerald J.
Lebentritt Michael S.
Niebling John F.
Robinson Eric J.
Semiconductor Energy Laboratory Co,. Ltd.
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