Laser process

Details Laser process Laser process

2006-01-31

2006-01-31

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

Reexamination Certificate

active

06991975

ABSTRACT:
A laser annealing process for recovering crystallinity of a deposited semiconductor film such as of silicon which had undergone morphological damage, said process comprising activating the semiconductor by irradiating a pulsed laser beam operating at a wavelength of 400 nm or less and at a pulse width of 50 nsec or less onto the surface of the film, wherein,said deposited film is coated with a transparent film such as a silicon oxide film at a thickness of from 3 to 300 nm, and the laser beam incident to said coating is applied at an energy density E (mJ/cm2) provided that it satisfies the relation:in-line-formulae description="In-line Formulae" end="lead"?log10N≦−0.02 (E−350),in-line-formulae description="In-line Formulae" end="tail"?where N is the number of shots of the pulsed laser beam.

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