Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-07-26
2011-07-26
Nguyen, Khiem D (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S487000, C257SE21134, C257SE21517
Reexamination Certificate
active
07985635
ABSTRACT:
A laser annealing process for recovering crystallinity of a deposited semiconductor film such as of silicon which had undergone morphological damage, said process comprising activating the semiconductor by irradiating a pulsed laser beam operating at a wavelength of 400 nm or less and at a pulse width of 50 nsec or less onto the surface of the film, wherein,said deposited film is coated with a transparent film such as a silicon oxide film at a thickness of from 3 to 300 nm, and the laser beam incident to said coating is applied at an energy density E (mJ/cm2) provided that it satisfies the relation:in-line-formulae description="In-line Formulae" end="lead"?log10N≦−0.02(E−350),in-line-formulae description="In-line Formulae" end="tail"?where N is the number of shots of the pulsed laser beam.
REFERENCES:
patent: 3667832 (1972-06-01), Kitano et al.
patent: 4059461 (1977-11-01), Fan et al.
patent: 4151008 (1979-04-01), Kirkpatric
patent: 4155779 (1979-05-01), Auston et al.
patent: 4198246 (1980-04-01), Wu
patent: 4262208 (1981-04-01), Suzuki et al.
patent: 4305640 (1981-12-01), Cullis et al.
patent: 4309224 (1982-01-01), Shibata
patent: 4309225 (1982-01-01), Fan et al.
patent: 4370175 (1983-01-01), Levatter
patent: 4379727 (1983-04-01), Hansen et al.
patent: 4431459 (1984-02-01), Teng
patent: 4436557 (1984-03-01), Wood et al.
patent: 4462150 (1984-07-01), Nishimura et al.
patent: 4468855 (1984-09-01), Sasaki
patent: 4473433 (1984-09-01), Bosch et al.
patent: 4475027 (1984-10-01), Pressley
patent: 4484334 (1984-11-01), Pressley
patent: 4497015 (1985-01-01), Konno et al.
patent: 4500365 (1985-02-01), Mori
patent: 4536231 (1985-08-01), Kasten
patent: 4546009 (1985-10-01), Tiedje et al.
patent: 4592799 (1986-06-01), Hayafuji
patent: 4609407 (1986-09-01), Masao et al.
patent: 4646426 (1987-03-01), Sasaki
patent: 4662708 (1987-05-01), Bagdal
patent: 4733944 (1988-03-01), Fahlen et al.
patent: 4769750 (1988-09-01), Matsumoto et al.
patent: 4851978 (1989-07-01), Ichihara
patent: 4861964 (1989-08-01), Sinohara
patent: 4884869 (1989-12-01), Uemura
patent: 4906491 (1990-03-01), Yamazaki
patent: 4937459 (1990-06-01), Ina
patent: 4943733 (1990-07-01), Mori et al.
patent: 4964720 (1990-10-01), Torigoe
patent: 4968643 (1990-11-01), Mukai
patent: 4970366 (1990-11-01), Imatou et al.
patent: 4997250 (1991-03-01), Oritz
patent: 5028558 (1991-07-01), Haisma et al.
patent: 5089802 (1992-02-01), Yamazaki
patent: 5095386 (1992-03-01), Scheibengraber
patent: 5097291 (1992-03-01), Suzuki
patent: 5180690 (1993-01-01), Czubatyj et al.
patent: 5219786 (1993-06-01), Noguchi
patent: 5225924 (1993-07-01), Ogawa et al.
patent: 5232674 (1993-08-01), Mukai et al.
patent: 5236865 (1993-08-01), Sandhu et al.
patent: 5250931 (1993-10-01), Misawa
patent: 5253110 (1993-10-01), Ichihara et al.
patent: 5263250 (1993-11-01), Nishiwaki et al.
patent: 5264383 (1993-11-01), Young
patent: 5272361 (1993-12-01), Yamazaki
patent: 5304357 (1994-04-01), Sato et al.
patent: 5306651 (1994-04-01), Masumo et al.
patent: 5307207 (1994-04-01), Ichihara
patent: 5347146 (1994-09-01), Soh
patent: 5366926 (1994-11-01), Mei et al.
patent: 5372836 (1994-12-01), Imahashi et al.
patent: 5401666 (1995-03-01), Tsukamoto
patent: 5403762 (1995-04-01), Takemura
patent: 5413958 (1995-05-01), Imahashi et al.
patent: 5424244 (1995-06-01), Zhang et al.
patent: 5432122 (1995-07-01), Chae
patent: 5561075 (1996-10-01), Nakazawa
patent: 5561081 (1996-10-01), Takenouchi et al.
patent: 5591492 (1997-01-01), Hirai et al.
patent: 5699191 (1997-12-01), Fork
patent: 5708252 (1998-01-01), Shinohara et al.
patent: 5858473 (1999-01-01), Yamazaki et al.
patent: 5897799 (1999-04-01), Yamazaki et al.
patent: 5968383 (1999-10-01), Yamazaki et al.
patent: 5986807 (1999-11-01), Fork
patent: 6002101 (1999-12-01), Yamazaki et al.
patent: 6061375 (2000-05-01), Zhang et al.
patent: 6149988 (2000-11-01), Shinohara et al.
patent: 6157492 (2000-12-01), Yamazaki et al.
patent: 6159777 (2000-12-01), Takenouchi et al.
patent: 6212012 (2001-04-01), Tanaka
patent: 6215595 (2001-04-01), Yamazaki et al.
patent: 6300176 (2001-10-01), Zhang et al.
patent: 6440785 (2002-08-01), Yamazaki et al.
patent: 6458200 (2002-10-01), Zhang
patent: 0 459 836 (1991-12-01), None
patent: 55-032026 (1980-03-01), None
patent: 57-083745 (1982-01-01), None
patent: 57-083745 (1982-05-01), None
patent: 58-127318 (1983-07-01), None
patent: 58-191420 (1983-11-01), None
patent: 59-045089 (1984-03-01), None
patent: 60-005508 (1985-01-01), None
patent: 60-224282 (1985-11-01), None
patent: 60-227484 (1985-11-01), None
patent: 60-245124 (1985-12-01), None
patent: 60-257511 (1985-12-01), None
patent: 61-080815 (1986-04-01), None
patent: 61-141174 (1986-06-01), None
patent: 61-152069 (1986-07-01), None
patent: 01-187814 (1988-01-01), None
patent: 63-006501 (1988-01-01), None
patent: 63-025933 (1988-02-01), None
patent: 63-159837 (1988-07-01), None
patent: 63-316430 (1988-12-01), None
patent: 01-076715 (1989-03-01), None
patent: 64-076715 (1989-03-01), None
patent: 01-096929 (1989-04-01), None
patent: 01-119020 (1989-05-01), None
patent: 01-076715 (1989-07-01), None
patent: 01-187814 (1989-07-01), None
patent: 01-235289 (1989-09-01), None
patent: 01-239837 (1989-09-01), None
patent: 01-241862 (1989-09-01), None
patent: 01-283917 (1989-11-01), None
patent: 01-286478 (1989-11-01), None
patent: 02-020681 (1990-01-01), None
patent: 02-051224 (1990-02-01), None
patent: 02-073623 (1990-03-01), None
patent: 02-187294 (1990-07-01), None
patent: 02-222154 (1990-09-01), None
patent: 02-255292 (1990-10-01), None
patent: 02-294027 (1990-12-01), None
patent: 03-016114 (1991-01-01), None
patent: 04-307727 (1991-04-01), None
patent: 03-159119 (1991-07-01), None
patent: 04-307727 (1991-10-01), None
patent: 03-286518 (1991-12-01), None
patent: 04-011226 (1992-01-01), None
patent: 04-171717 (1992-06-01), None
patent: 04-338631 (1992-11-01), None
patent: 05-021339 (1993-01-01), None
patent: 06-124913 (1994-05-01), None
Chrisey et al., “Pulsed Laser Deposition of Thin Films”, Section 2.2.2., Excimer Discharge Design, 1994, pp. 27-29; A. Wiley—Interscience Corporation, John Wiley & Sons, Inc., New York.
“Applications of Excimer Lasers in Microelectronics”, Tim McGrath, Lasertechnics, Inc., Albuquerque, New Mexico, Solid State Technology/Dec. 1983, pp. 165-169.
High-Performance TFT's Fabricated by XeC1 Excimer Laser Annealing of Hydrogenated Amorphous-Silicon Film, Kenju Sera et al., IEEE Transactions on Electron Devices, vol. 36, No. 12, Dec. 1989, pp. 2868-2872.
Semiconductor World, Chapter 2, Active Element Array Forming Technology Annealing Apparatus, Excimer Laser Annealing Apparatus Leonix, Oct. 1992, pp. 196-197.
Excimer Laser Annealed Poly-Crystalline Silicon TFT, Setsuo Kaneko, T. IEEE Japan, vol. 110-A, No. 10, 1990, pp. 679-683.
“XeC1 Excimer Laser Annealing Used to Fabricate Poly-Si TFT's”, Toshiyuki Sameshima et al., Japanese Journal of Applied Physics, vol. 28, No. 10, Oct. 1989, pp. 1789-1793.
Pennington, K.S. et al., “CCD Imaging Array Combining Fly's Eye Lens with TDI for Increasing Light-gathering Ability”, IBM Technical Disclosure Bulletin, vol. 21, No. 2, Jul. 1978, pp. 857-858.
“Crystallization of Amorphous Silicon by Excimer Laser Annealing with a Line Shape Beam Having A Gaussian Profile”, Young Min Jhon et al., Jpn. J. Appl. Phys. vol. 33 (1994), pp. L1438-1441.
“Enlargement of Poly-Si Film Grain Size by Excimer Laser Annealing and its Application to High-Performance Poly-Si Thin Film Transistor”, Hiroyuki Kuriyama et al., Jpn. J. App. Phys., vol. 30, No. 12B, Dec. 1991, pp. 3700-3703.
“Formation of p-n Junctions and Silicides in Silicon Using a High Performance Laser Beam Homogenization System”, M. Wagner et al., Applied Surface Science 43 (1989), pp. 260-263.
“Improving the Uniformity of Poly-Si Films Using a New Excimer Laser Annealing Method for Giant-Microelectronics”, Hiroyuki Kuriyama et al., Jpn. J. Appl. Phys. vol. 31, Part 1, No. 12B, Dec. 1992, pp. 4550-4554.
Ishihara Hiroaki
Yamazaki Shunpei
Zhang Hongyong
Costellia Jeffrey L.
Nguyen Khiem D
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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