Laser plasma x-ray source, semiconductor lithography apparatus u

X-ray or gamma ray systems or devices – Source

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378143, H01J 3508

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active

059913606

ABSTRACT:
A laser plasma X-ray source has an improved X-ray conversion efficiency and a minimized occurrence of debris, and a semiconductor lithography apparatus using the same and a method therefor are provided. An X-ray generation unit has a vacuum chamber 5 which encases the target; target supply unit 110 which supplies a fine particle mixture gas target into the vacuum chamber 5; a laser irradiation unit 120 which irradiates a laser beam 2 on the particle mixture gas target 10; and a target recovery unit 130 which recovers unused particle mixture gas target from the vacuum chamber 5.

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P. Celliers, XP-002063259 Optimization of x-ray sources for proximity lithography produced by a high average power Nd: glass laser.sup.a), J. Appl. Phys. 79 (11), Jun. 1, 1996, pp. 8258-8268.
H. Fiedorowicz, et al, XP 000380906 x-ray emission from laser-irradiated gas puff targets, Appl. phys. Lett. 62 (22), May 31, 1993, pp. 2778-2780.

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