Laser/plasma chemical processing of substrates

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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118 501, 118620, 118728, 156345, 156635, 156646, 156654, 2041923, 204298, 219121LJ, 219121LM, 427 38, 427 531, 427 541, H01L 21306, B44C 122, C03C 1500, C23F 102

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046247360

ABSTRACT:
A process for the modification of substrate surfaces is described, wherein etching or deposition at a surface occurs only in the presence of both reactive species and a directed beam of coherent light.

REFERENCES:
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patent: 4192706 (1980-03-01), Horiike
patent: 4198261 (1980-04-01), Busta et al.
patent: 4281030 (1981-07-01), Silfvast
patent: 4478677 (1984-10-01), Chen et al.
R. Solanki et al., "Applied Physics Letters", 38(7), Apr. 1, 1981, Laser Photodeposition of Refractory Metals, pp. 572-574.
N. Ianno et al., "Applied Physics Letters", 39(8), Oct. 15, 1981, Plama Annealing of Ion Implanted Semiconductors, pp. 622-624.
R. W. Andreatta et al., "Applied Physics Letters", 40(2), Jan. 15, 1982, Low-Temperature Growth of Polycrystalline Si and Ge Films by Ultraviolet Laser Photodissociation of Silane & Germane, pp. 183-185.
P. K. Boyer et al., "Applied Physics Letters", 40(8), Apr. 15, 1982, Laser-Induced Chemical Vapor Deposition of SiO.sub.2, pp. 716-719.

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