Laser photochemical etching using surface halogenation

Details Laser photochemical etching using surface halogenation Laser photochemical etching using surface halogenation

1987-11-20

1989-05-30

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

118 501, 118620, 118728, 156643, 156646, 156651, 156656, 1566591, 156345, 21912169, 21912185, 20419235, 204298, 427 38, 427 531, B44C 122, C23F 102, D05D 306, B23K 900

Patent

active

048348341

ABSTRACT:
A method for maskless patterning and etching of metals is disclosed. The method comprises the steps of providing a metal, forming a passivating layer of an oxide or nitride upon the surface of the metal, exposing the metal to a halogenous atmosphere, while patterning the metal using a directed energy beam to selectively replace the oxides or nitrides with halides, and heating the patterned metal while exposing it to an etchant to etch regions located below the halogenated surfaces leaving the remaining passivated regons intact.

REFERENCES:
patent: 4490210 (1984-12-01), Chen et al.
patent: 4566937 (1986-01-01), Pitts
patent: 4615904 (1986-10-01), Ehrlich et al.
patent: 4619894 (1986-10-01), Bozler et al.
patent: 4622095 (1986-11-01), Grobman et al.
Rothschild et al., Appl. Phys. Lett. 49:1554-1556 (1986).

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