Laser mask and crystallization method using the same

Details Laser mask and crystallization method using the same Laser mask and crystallization method using the same

2009-06-30

2010-10-19

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257SE21561

Reexamination Certificate

active

07816196

ABSTRACT:
An embodiment of a laser crystallization method includes providing a substrate on which an amorphous silicon thin film is deposited, positioning a laser mask over the substrate, the laser mask including a mask pattern that contains transmitting regions and a blocking region, irradiating a first laser beam onto a surface of the substrate through the pattern of the laser mask to first crystallize a predetermined region of the silicon thin film, moving the laser mask or a stage on which the substrate is loaded in an X-axis direction to perform second crystallization using the laser mask, repeatedly performing the crystallization to an end of the substrate in the X-axis direction, moving the laser mask or the stage in a Y-axis direction, and repeatedly performing the crystallization in the Y-axis direction to complete crystallization.

REFERENCES:
patent: 6736895 (2004-05-01), Jung
patent: 7569307 (2009-08-01), Seo et al.
patent: 2004/0127066 (2004-07-01), Jung
patent: 2005/0124145 (2005-06-01), Jung
patent: 2005/0142450 (2005-06-01), Jung

Affiliated with

Also associated with

Rating

Laser mask and crystallization method using the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Laser mask and crystallization method using the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Laser mask and crystallization method using the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4195499