Laser mask and crystallization method using the same

Details Laser mask and crystallization method using the same Laser mask and crystallization method using the same

2011-02-22

2011-02-22

Tran, Minh-Loan T (Department: 2826)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C430S005000, C257SE21134, C257SE21703

Reexamination Certificate

active

07892955

ABSTRACT:
A crystallization method using a mask includes providing a substrate having a semiconductor layer; positioning a mask over the substrate, the mask having first, second and third blocks, each block having a periodic pattern including a plurality of transmitting regions and a blocking region, the periodic pattern of the first block having a first position, the periodic pattern of the second block having a second position, the periodic pattern of the third block having a third position, the first, second and third positions being different from each other; and crystallizing the semiconductor layer by irradiating a laser beam through the mask.

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