Laser marking of semiconductor wafer substrate while inhibiting

Details Laser marking of semiconductor wafer substrate while inhibiting Laser marking of semiconductor wafer substrate while inhibiting

1998-07-24

2000-12-05

Smith, Matthew

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

Ionized irradiation

438228, 438795, H01L 21324

Patent

active

061566764

ABSTRACT:
The present invention provides apparatus and a process for efficiently removing particles generated during a laser marking of the semiconductor wafer substrate, thereby improving the yield. The process of the invention for marking a semiconductor wafer substrate by a beam of laser radiation comprises the steps of flowing a gas over a marking region at a predetermined flow rate and removing the gas from the marking region at the same predetermined flow rate, thereby generating a gas flow having a predetermined flow rate over and adjacent the marking region so that particles produced from the semiconductor wafer substrate while it is being marked will be removed. In a preferred embodiment, the semiconductor wafer substrate may be mounted with its upper surface to be marked directed downwardly while the laser marking beam is directed upwardly to the substrate.

REFERENCES:
patent: 3742183 (1973-06-01), Castor et al.
patent: 5543365 (1996-08-01), Wills et al.
patent: 5610104 (1997-03-01), Mitchell

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