Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-07-19
2011-07-19
Harvey, Minsun (Department: 2828)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S473000, C438S487000, C438S502000, C438S509000
Reexamination Certificate
active
07981733
ABSTRACT:
An object of the present invention is obtaining a semiconductor film with uniform characteristics by improving irradiation variations of the semiconductor film. The irradiation variations are generated due to scanning while irradiating with a linear laser beam of the pulse emission. At a laser crystallization step of irradiating a semiconductor film with a laser light, a continuous light emission excimer laser emission device is used as a laser light source. For example, in a method of fabricating an active matrix type liquid crystal display device, a continuous light emission excimer laser beam is irradiated to a semiconductor film, which is processed to be a linear shape, while scanning in a vertical direction to the linear direction. Therefore, more uniform crystallization can be performed because irradiation marks can be avoided by a conventional pulse laser.
REFERENCES:
patent: 4059461 (1977-11-01), Fan et al.
patent: 4404735 (1983-09-01), Sakurai
patent: 4407060 (1983-10-01), Sakurai
patent: 4711026 (1987-12-01), Swiggett et al.
patent: 5313075 (1994-05-01), Zhang et al.
patent: 5576231 (1996-11-01), Konuma et al.
patent: 5581102 (1996-12-01), Kusumoto
patent: 5594569 (1997-01-01), Konuma et al.
patent: 5619045 (1997-04-01), Konuma et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5756364 (1998-05-01), Tanaka et al.
patent: 5811326 (1998-09-01), Yamamoto
patent: 5815494 (1998-09-01), Yamazaki et al.
patent: 5831281 (1998-11-01), Kurogane et al.
patent: 5841102 (1998-11-01), Noddin
patent: 5854803 (1998-12-01), Yamazaki et al.
patent: 5861337 (1999-01-01), Zhang et al.
patent: 5882960 (1999-03-01), Zhang et al.
patent: 5891764 (1999-04-01), Ishihara et al.
patent: 5895933 (1999-04-01), Zhang et al.
patent: 5907770 (1999-05-01), Yamazaki et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5939731 (1999-08-01), Yamazaki et al.
patent: 5953595 (1999-09-01), Gosain et al.
patent: 6002523 (1999-12-01), Tanaka
patent: 6008101 (1999-12-01), Tanaka et al.
patent: 6031249 (2000-02-01), Yamazaki et al.
patent: 6054739 (2000-04-01), Yamazaki et al.
patent: 6093935 (2000-07-01), Kusumoto
patent: 6104535 (2000-08-01), Tanaka
patent: 6137633 (2000-10-01), Tanaka
patent: 6165876 (2000-12-01), Yamazaki et al.
patent: 6176926 (2001-01-01), Tanaka
patent: 6210996 (2001-04-01), Yamazaki et al.
patent: 6242292 (2001-06-01), Yamazaki et al.
patent: 6246524 (2001-06-01), Tanaka
patent: 6274885 (2001-08-01), Yamazaki et al.
patent: 6281552 (2001-08-01), Kawasaki et al.
patent: 6300176 (2001-10-01), Zhang et al.
patent: 6304385 (2001-10-01), Tanaka
patent: 6317195 (2001-11-01), Taniguchi
patent: 6324195 (2001-11-01), Suzuki et al.
patent: 6326246 (2001-12-01), Yamamoto
patent: 6331994 (2001-12-01), Ohmi et al.
patent: 6391690 (2002-05-01), Miyasaka
patent: 6393042 (2002-05-01), Tanaka
patent: 6468842 (2002-10-01), Yamazaki et al.
patent: 6501098 (2002-12-01), Yamazaki
patent: 6535535 (2003-03-01), Yamazaki et al.
patent: 6613619 (2003-09-01), Yamazaki et al.
patent: 6706570 (2004-03-01), Yamazaki et al.
patent: 6707614 (2004-03-01), Tanaka
patent: 6710855 (2004-03-01), Shiraishi
patent: 6750423 (2004-06-01), Tanaka et al.
patent: 6750424 (2004-06-01), Tanaka
patent: 6784030 (2004-08-01), Yamazaki et al.
patent: 6893503 (2005-05-01), Ohnuma et al.
patent: 6894839 (2005-05-01), Sugiyama et al.
patent: 7528079 (2009-05-01), Yamazaki et al.
patent: 2002/0005888 (2002-01-01), Obata
patent: 2002/0080841 (2002-06-01), Yin et al.
patent: 2002/0173147 (2002-11-01), Miyasaka
patent: 2003/0201442 (2003-10-01), Makita
patent: 0820 132 (1998-01-01), None
patent: 07-130652 (1995-05-01), None
patent: 8-97141 (1996-04-01), None
patent: 8-203843 (1996-08-01), None
patent: 10-163547 (1998-06-01), None
patent: 10-270363 (1998-10-01), None
Yoshida, T. et al, “A Full Color Thresholdless Antiferroelectric LCD, Exhibiting Wide Viewing Angle with Fast Response Time,” SID 97 Digest, 1997, pp. 841-844.
Furue, H. et al, “Characteristics and Driving Scheme of Polymer- Stabilized Monostable FLCD Exhibiting Fast Response Time and High Contrast Ratio with Gray-Scale Capability,” SID 98 Digest, 1998, pp. 782-785.
Office Action re Japanese application No. JP 2000-033877, dated Mar. 1, 2011 (with English translation).
Tanaka Koichiro
Yamazaki Shunpei
Fordé Delma R
Harvey Minsun
Husch & Blackwell LLP
Semiconductor Energy Laboratory Co,. Ltd.
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