Laser irradiation apparatus, laser irradiation method, and...

Details Laser irradiation apparatus, laser irradiation method, and... Laser irradiation apparatus, laser irradiation method, and...

2007-12-04

2007-12-04

Schillinger, Laura M. (Department: 2813)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

C438S166000, C438S487000

Reexamination Certificate

active

10799626

ABSTRACT:
A second laser light of a continuous wave oscillation is irradiated to a region melted by a first laser light of a pulsed oscillation having a harmonic. Specifically, the first laser light has a wavelength not longer than that of visible light (830 nm, preferably not more than 780 nm). The absorption coefficient of the second laser light to a semiconductor film considerably increases because the semiconductor film is melted by the first laser light, and therefore the second laser light becomes easy to be absorbed in the semiconductor film.

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Search Report and Written Opinion dated Aug. 3, 2005 from The Danish Patent and Trademark Office, for Application No. 2003-07418-4.

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