Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-10-24
2006-10-24
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S487000
Reexamination Certificate
active
07125761
ABSTRACT:
An aggregation of crystals extending long in the scanning direction (a long crystal grain region) is formed when a continuous wave laser oscillator (a CW laser oscillator) is employed for annealing the semiconductor film in the manufacturing process of a semiconductor device. The long crystal grain region has a characteristic similar to that of single crystal in the scanning direction, but there is restriction for high integration because of the small output of the CW laser oscillator. pa In order to solve the problem, a pulsed laser beam1having a wavelength absorbed sufficiently in the semiconductor film is used in combination with a laser beam2having a high output and having a wavelength absorbed sufficiently in the melted semiconductor film. After irradiating the laser beam1to melt the semiconductor widely, the laser beam2is irradiated to the melted region. And then the laser beam2and the semiconductor film are moved relatively while keeping the melting state so as to form the long crystal grain region. The laser beam2keeps to be irradiated to the semiconductor film until the laser beam1is irradiated, and the output of the laser beam2is attenuated when the laser beam1is irradiated so as not to give the energy more than is needed so that the very uniform laser annealing becomes possible. Thus the long crystal grain region having a width 10 times as broad as the conventional one can be formed.
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Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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