Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...
Reexamination Certificate
2007-11-27
2010-06-15
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
C438S487000, C438S166000
Reexamination Certificate
active
07737054
ABSTRACT:
A second laser light of a continuous wave oscillation is irradiated to a region melted by a first laser light of a pulsed oscillation having a harmonic. Specifically, the first laser light has a wavelength not longer than that of visible light (830 nm, preferably not more than 780 nm). The absorption coefficient of the second laser light to a semiconductor film considerably increases because the semiconductor film is melted by the first laser light, and therefore the second laser light becomes easy to be absorbed in the semiconductor film.
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Tanaka Koichiro
Yamazaki Shunpei
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Taylor Earl N
Vu David
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