Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2004-12-30
2008-12-23
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C257SE21134
Reexamination Certificate
active
07468312
ABSTRACT:
A method of manufacturing a semiconductor device includes the steps of emitting a plurality of laser beams out of a plurality of lasers, synthesizing the plurality of laser beams into a laser light wherein centers of two adjacent laser beams in the laser light are distant from each other, and irradiating the laser light to a semiconductor film, wherein a distribution of an energy density of the laser light in a longitudinal direction in the laser light is within ±10% except for attenuation regions, thereby uniformly annealing the semiconductor film.
REFERENCES:
patent: 4330363 (1982-05-01), Biegesen et al.
patent: 4370175 (1983-01-01), Levatter
patent: 4566043 (1986-01-01), Tamura
patent: 4668089 (1987-05-01), Oshida et al.
patent: 4978970 (1990-12-01), Okazaki
patent: 5558788 (1996-09-01), Mashburn
patent: 5626670 (1997-05-01), Varshney et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5795795 (1998-08-01), Kousai et al.
patent: 5803965 (1998-09-01), Yoon
patent: 5854803 (1998-12-01), Yamazaki et al.
patent: 5869803 (1999-02-01), Noguchi et al.
patent: 5886320 (1999-03-01), Gallo et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5953597 (1999-09-01), Kusumoto et al.
patent: 6043453 (2000-03-01), Arai
patent: 6060392 (2000-05-01), Essaian et al.
patent: 6143661 (2000-11-01), Kousai et al.
patent: 6160827 (2000-12-01), Tanaka
patent: 6187088 (2001-02-01), Okumura
patent: 6204099 (2001-03-01), Kusumoto et al.
patent: 6210996 (2001-04-01), Yamazaki et al.
patent: 6235614 (2001-05-01), Yang
patent: 6265745 (2001-07-01), Kusumoto et al.
patent: 6285042 (2001-09-01), Ohtani et al.
patent: 6335541 (2002-01-01), Ohtani et al.
patent: 6365933 (2002-04-01), Yamazaki et al.
patent: 6396616 (2002-05-01), Fitzer et al.
patent: 6468842 (2002-10-01), Yamazaki et al.
patent: 6516009 (2003-02-01), Tanaka
patent: 6567219 (2003-05-01), Tanaka
patent: 6573162 (2003-06-01), Tanaka et al.
patent: 6590230 (2003-07-01), Yamazaki et al.
patent: 6650480 (2003-11-01), Tanaka
patent: 6700096 (2004-03-01), Yamazaki et al.
patent: 2001/0019861 (2001-09-01), Yamazaki et al.
patent: 2002/0094008 (2002-07-01), Tanaka
patent: 2002/0100937 (2002-08-01), Yamazaki et al.
patent: 2003/0036251 (2003-02-01), Mitsuhashi et al.
patent: 2003/0089691 (2003-05-01), Tanaka
patent: 2003/0112322 (2003-06-01), Tanaka
patent: 2005/0181550 (2005-08-01), Tanaka
patent: 62-104117 (1987-05-01), None
patent: 64-061017 (1989-03-01), None
patent: 01-115117 (1989-05-01), None
patent: 02-181419 (1990-07-01), None
patent: 04-282869 (1992-10-01), None
patent: 05-226790 (1993-09-01), None
patent: 05-315278 (1993-11-01), None
patent: 06-163401 (1994-06-01), None
patent: 07-183540 (1995-07-01), None
patent: 07-326769 (1995-12-01), None
patent: 08-078329 (1996-03-01), None
patent: 09-199441 (1997-07-01), None
patent: 3221724 (2000-08-01), None
patent: 2001-023919 (2001-01-01), None
patent: 302550 (1997-04-01), None
patent: 382741 (2000-02-01), None
Office Action dated Jun. 14, 2007 issued in corresponding Taiwan Application No. 91132716.
Hara, Akito et al.,“Ultra-High Performance Poly-Si TFTs on a Glass by a Stable Scanning CW Laser Lateral Crystallization”, AM-LCD 2001, pp. 227-230.
Takeuchi, F.,“Performance of Poly-Si TFTs Fabricated by a Stable Scanning CW Laser Crystallization”, AM-LCD 2001, pp. 251-254.
U.S. Appl. No. 10/279,960 filed Oct. 25, 2002 is being submitted as related information for the above application being filed.
Costellia Jeffrey L.
Geyer Scott B.
Nikmanesh Seahvosh J
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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