Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-05-20
2008-05-20
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S487000, C438S096000
Reexamination Certificate
active
10989341
ABSTRACT:
The linear laser beam generally has a width of 1 mm or less, and it is necessary to adjust the optical system with high accuracy in order to form the laser beam having such a narrow width and having a homogeneous intensity distribution. The adjustment of the optical system requires a large amount of time, and the laser irradiation apparatus using this optical system cannot be used during the adjustment of the optical system. This causes the throughput to decrease. The present invention is made to facilitate a readjustment of the optical system and to shorten the time required for it. When the misalignment of the laser beam is corrected to keep the incident position in the optical system the same by moving the laser beam parallel with the use of a single optical element, it is no longer necessary to readjust all the optical elements, and therefore the time can be saved.
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Mulpuri Savitri
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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