Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-03-22
2011-03-22
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257SE21561
Reexamination Certificate
active
07910416
ABSTRACT:
In annealing of a non-single crystal silicon film by a linear laser beam, it is performed so as irradiation tracks caused by the linear laser beam do not remain in the silicon film. Laser light is partitioned by an integrally formed cylindrical array lens, and is composed into a single uniform laser beam on an irradiation surface by a cylindrical lens and a doublet cylindrical lens. The integrally formed cylindrical array lens is used, and therefore cylindrical lenses structuring this array lens can be made very fine. It thus becomes possible to partition the laser light into a large number of partitions, and the uniformity of the laser beam on the irradiation surface is increased. Very few laser irradiation tracks remain on the silicon film annealed by the very uniform laser beam.
REFERENCES:
patent: 4585948 (1986-04-01), Schneider et al.
patent: 5561081 (1996-10-01), Takenouchi et al.
patent: 5644431 (1997-07-01), Magee
patent: 5721416 (1998-02-01), Burghardt et al.
patent: 5897799 (1999-04-01), Yamazaki et al.
patent: 5900980 (1999-05-01), Yamazaki et al.
patent: 5959779 (1999-09-01), Yamazaki et al.
patent: 5968383 (1999-10-01), Yamazaki et al.
patent: 6002101 (1999-12-01), Yamazaki et al.
patent: 6002523 (1999-12-01), Tanaka
patent: 6038075 (2000-03-01), Yamazaki et al.
patent: 6137633 (2000-10-01), Tanaka
patent: 6157492 (2000-12-01), Yamazaki et al.
patent: 6160827 (2000-12-01), Tanaka
patent: 6212012 (2001-04-01), Tanaka
patent: 6239913 (2001-05-01), Tanaka
patent: 6353218 (2002-03-01), Yamazaki et al.
patent: 6437313 (2002-08-01), Yamazaki et al.
patent: 6516009 (2003-02-01), Tanaka
patent: 6538819 (2003-03-01), Tanaka
patent: 6728039 (2004-04-01), Tanaka
patent: 6787755 (2004-09-01), Yamazaki et al.
patent: 6989524 (2006-01-01), Yamazaki et al.
patent: 7092415 (2006-08-01), Tanaka
patent: 2005/0019997 (2005-01-01), Kusumoto et al.
patent: 2006/0068607 (2006-03-01), Yamazaki et al.
patent: 63-103837 (1988-05-01), None
patent: 07-130652 (1995-05-01), None
patent: 09-275081 (1997-10-01), None
patent: 10-172911 (1998-06-01), None
patent: 10-242073 (1998-09-01), None
patent: 10-253916 (1998-09-01), None
patent: 10-293267 (1998-11-01), None
patent: 11-186189 (1999-07-01), None
Booth Richard A.
Costellia Jeffrey L.
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Laser irradiation apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Laser irradiation apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Laser irradiation apparatus will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2739912