Laser irradiating apparatus and method of manufacturing...

Details Laser irradiating apparatus and method of manufacturing... Laser irradiating apparatus and method of manufacturing...

2006-11-13

2009-02-03

Garber, Charles D. (Department: 2812)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

C438S149000, C257SE21134, C257SE21347

Reexamination Certificate

active

07485586

ABSTRACT:
First laser light is irradiated (energy density of 400 to 500 mj/cm2) to a semiconductor film102in an atmosphere containing oxygen in order to obtain a semiconductor film102bhaving large depressions and projections on the surface. Then, an oxidized film105aformed by the irradiation of the first laser light is removed. After that, an inert gas with an oxygen density of 10 ppm or below is blown thereto, and, at the same time, second laser light is irradiated thereto (the energy density is higher than that of the irradiation of the first laser light). Thus, the surface of the semiconductor film102bis flattened, and a semiconductor film102chaving fewer depressions and projections on the surface can be obtained.

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K. Suga et al.,P-3: The Effect of a Laser Annealing Ambient on the Morphology and TFT Performance of Poly-Si Films, SID 00 Digest, SID International Symposium Digest of Technical Papers, 2000, pp. 534-537.

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