Laser-induced production of nitrosyl fluoride for etching of sem

Details Laser-induced production of nitrosyl fluoride for etching of sem Laser-induced production of nitrosyl fluoride for etching of sem

1985-02-07

1985-08-20

Straub, Gary P.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 423386, 2041571R, 2041571H, H01L 21265

Patent

active

045362521

ABSTRACT:
Nitrosyl fluoride is prepared by laser-induced method wherein the nitrosyl luoride is produced in situ or in close proximity to where it is used to etch semiconductor surfaces.
A reaction mixture of a catalyst compound and a fluoro compound, wherein the catalyst compound is an oxide of nitrogen selected from the group of nitrogen oxide compounds consisting of NO, N.sub.2 O, and NO.sub.2 and wherein the fluoro compound is selected from the group of fluoro compounds consisting of NF.sub.3 and N.sub.2 F.sub.4, is irradiated with CO.sub.2 laser radiation to produce FNO. FNO reacts with an exposed silicon material to produce SiF.sub.4 and nitrogen oxide. Since the oxide is regenerated, it can be regarded as a catalyst which can be recovered and recycled.
A production scheme for producing nitrosyl fluoride for etching is disclosed wherein the nitrosyl fluoride is produced directly in the laser reaction chamber by passing a CO.sub.2 laser beam through the reaction mixture. Alternately, the nitrosyl fluoride can also be produced in a side chamber and the gas flowed into an etching chamber.

REFERENCES:
patent: 3306834 (1967-02-01), Fox et al.
patent: 3408276 (1968-10-01), Rey
patent: 3554699 (1971-01-01), Gross
patent: 4431477 (1984-02-01), Zajac
patent: 4447304 (1984-05-01), Malatesta et al.
Merck Index, Tenth Edition, p. 953, listing No. 6494.

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