Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Patent
1996-08-01
1999-02-23
McCamish, Marion
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
216 72, 216 75, 216 74, C23F 100
Patent
active
058740112
ABSTRACT:
Techniques and apparatus for the laser induced etching of a reactive material, or of a multilayer substrate or wafer comprising layers of materials of different etching characteristics and reactivities, are disclosed. Short wavelength laser radiation and control of the process ambient equalize etch rates of the layers of a multilayer substrate or wafer and allow high-resolution etching. A suppressant gas introduced into a halogen-containing ambient suppresses explosive reactions between the ambient and reactive materials or layers. For less reactive layers or materials, reduced-pressure air is a suitable ambient. The techniques and apparatus disclosed herein are particularly useful in the manufacture of magnetic data transfer heads.
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Engellenner Thomas J.
Juska Cheryl
McCamish Marion
Revise, Inc.
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