Laser induced chemical etching of metals with excimer lasers

Details Laser induced chemical etching of metals with excimer lasers Laser induced chemical etching of metals with excimer lasers

1984-01-24

1984-12-25

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 156635, 156646, 156656, 156664, 156666, 219121LJ, 427 531, C23F 102, B44C 122, C03C 1500, C03C 2506

Patent

active

044902115

ABSTRACT:
Disclosed is a method of etching a metallized substrate by excimer laser radiation. The substrate is exposed to a selected gas, e.g., a halogen gas, which spontaneously reacts with the metal forming a solid reaction product layer on the metal by a partial consumption of the metal. A beam of radiation from an excimer laser, e.g. XeF laser operating at a wavelength of 351 nm or XeCl laser at 308 nm or KrF laser at 248 nm or KrCl laser at 222 nm or ArF laser at 193 nm or F.sub.2 laser at 157 nm, is applied to the reaction product in a desired pattern to vaporize the reaction product and thereby selectively etch the metal with a high resolution.

REFERENCES:
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patent: 4221047 (1980-09-01), Narken et al.
patent: 4245273 (1981-01-01), Feinberg et al.
patent: 4260649 (1981-04-01), Dension et al.
patent: 4331504 (1982-05-01), Chuang et al.
patent: 4332999 (1982-06-01), Wittke
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"Laser-Induced Chemical Etching of Ferrites" by J. Addy et al., IBM Technical Disclosure Bulletin, vol. 25, No. 7A, Dec. 1982, p. 3256.
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