Laser fuse and antifuse structures formed over the active circui

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

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257665, 257734, H01L 2352, H01L 2362

Patent

active

059863196

ABSTRACT:
In an integrated circuit where one desires the most compact arrangement of fuses and active circuitry, an insulating layer is deposited over active circuitry which includes the associated interconnect layers. A protective layer made with a reflective material may be used as a conductive layer above the lower layers of the integrated circuit containing active circuitry which includes interconnect layers of any desired number. This protective layer is patterned below the areas that will later contain fuses (or antifuses or both). Above this protective layer another insulating layer is deposited. A fuse layer which may be metal or another conductive film is then deposited. This conductive layer is patterned to provide the desired fuses (and/or antifuses) as required, with some or all of the fuses aligned with the protective layer deposited underneath. The protective layer is patterned such that the area of the protective layer underneath the fuses will absorb and/or deflect much of the radiant energy that does not directly impinge upon the fuses.

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PTO 93-0394 "semiconductor Arrangement" Yoichi Akasaka et al. (DE 3223619 A1). Translated by : FLS, Inc., Nov. 1992.

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