Laser fault correction of semiconductor devices

Details Laser fault correction of semiconductor devices Laser fault correction of semiconductor devices

1998-06-02

2000-10-10

Anderson, Bruce C.

Radiant energy

Inspection of solids or liquids by charged particles

Electron probe type

2504922, 250305, 257665, H01L 2348, G01N 2318

Patent

active

06130428&

ABSTRACT:
An E-beam generator and detector arrangement sends an electron beam through a series of differentially evacuated vacuum chambers of small size to detect faulty circuitry in individual semiconductor devices. The vacuum chambers are open to one end and are sealed by the semiconductor device without contacting the vacuum chambers. A laser generator is operated by a control system with the E-beam generator and detector arrangement to provide a laser beam in a known physical relationship to the electron beam to correct detected faulty circuitry in the semiconductor devices. The E-beam generator and detector arrangement confirms the correction without further handling of the semiconductor device.

REFERENCES:
patent: 4607167 (1986-08-01), Petric
patent: 5360988 (1994-11-01), Uda et al.
patent: 5521516 (1996-05-01), Hanagama et al.

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