Laser diode array and manufacturing method thereof

Details Laser diode array and manufacturing method thereof Laser diode array and manufacturing method thereof

1991-05-10

1992-11-10

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 45, 372 46, H01S 319

Patent

active

051630648

ABSTRACT:
The present invention relates a laser diode array and its manufacturing method. After formation of V-channels on an N-type GaAs substrate, each layer is formed by molecular beam epitaxy technique. By using that Si acts as P-type dopant on {111} A surface of V-channel, while acting as N-type dopant on {100} surface of the outside of V-channel, a laser array structure is improved. Thus, the present invention is useful in obtaining stable optical output efficiency and mode control, yield improvement, reproducibility, and high output laser beam.

REFERENCES:
patent: 4786918 (1988-11-01), Thornten et al.
patent: 4803691 (1989-02-01), Scifres et al.
patent: 5010556 (1991-04-01), Imanaka et al.

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