Laser diffusion fabrication of solar cells

Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Diffusing a dopant

Reexamination Certificate

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C438S795000

Reexamination Certificate

active

07915154

ABSTRACT:
A method of semiconductor junction formation in Laser diffusion process for fabrication of solar cells provides for delivery of inert gases in the vicinity of the Si wafer while dopant species are being diffused form a dopant source into the surface of the wafer irradiated by a laser beam. The laser beam is emitted by CW- or pulsed operated lasers including fiber lasers. Optionally, the passivation of the surface and formation of the antireflection coating are performed simultaneously with the diffusion of the dopant species.

REFERENCES:
patent: 4343832 (1982-08-01), Smith
patent: 5323013 (1994-06-01), Kelly
patent: 5527389 (1996-06-01), Rosenblum
patent: 6946404 (2005-09-01), Bijker et al.
Toshiyuki Sametshima, The dopant mechanism in excimer laser induced molten Si, Proceedings of the Materials Research Society, vol. 101, pp. 491-494.

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