Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Diffusing a dopant
Reexamination Certificate
2011-03-29
2011-03-29
Geyer, Scott B (Department: 2812)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Diffusing a dopant
C438S795000
Reexamination Certificate
active
07915154
ABSTRACT:
A method of semiconductor junction formation in Laser diffusion process for fabrication of solar cells provides for delivery of inert gases in the vicinity of the Si wafer while dopant species are being diffused form a dopant source into the surface of the wafer irradiated by a laser beam. The laser beam is emitted by CW- or pulsed operated lasers including fiber lasers. Optionally, the passivation of the surface and formation of the antireflection coating are performed simultaneously with the diffusion of the dopant species.
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Toshiyuki Sametshima, The dopant mechanism in excimer laser induced molten Si, Proceedings of the Materials Research Society, vol. 101, pp. 491-494.
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