Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1991-03-04
1992-01-14
Lewis, Michael L.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156610, 156612, 156DIG80, 156DIG86, 156DIG99, 20415741, 423290, 427255, 427 42, 427 531, C30B 2306, C23C 1634, C01B 21064
Patent
active
050807536
ABSTRACT:
Thin films of boron nitride are grown on single crystal silicon substrates using laser deposition techniques. The films are characterized by essentially a single crystal throughout and having a cubic structure which is in epitaxial registry with the underlying silicon substrate.
REFERENCES:
patent: 4118539 (1978-10-01), Hirai et al.
patent: 4297387 (1981-10-01), Beale
patent: 4714625 (1987-12-01), Chopra et al.
patent: 4832986 (1989-05-01), Gladfelter et al.
patent: 4843031 (1989-06-01), Ban et al.
Rother et al., "Preparation & Characterization of Ion Plated Boron Nitride", Thin Solid Films, vol. 142, pp. 83-99 (1986).
Koizumi, S., Applied Physics letters, 57, pp. 563-565, 8/6/90.
Weissmantel et al., "Preparation and Properties of Hard i-C and i-BN Coatings", Thin Solid Films, vol. 96, pp. 31-44 (1982).
Chemical Abstract 110(22):197972n.
A. R. Badzian, "Cubic Boron Nitride--Diamond Mixed Crystals", Mat. Res. Bull., vol. 16, pp. 1385-1393, (1981).
G. Kessler et al., "Laser Pulse Vapour Deposition of Polycrystalline Wurtzite-type BN", Thin Solid Films, vol. 147, pp. L45-L50 (1987).
P. T. Murray et al., "Growth of Stoichiometric BN Films by Pulsed Laser Evaporation", Mat. Res. Soc. Cymp. Proc., vol. 128, pp. 469-474 (1989).
G. L. Doll et al., "X-Ray Diffraction Study of Cubic Boron Nitride Films Grown Epitaxially on Silicon", Mat. Res. Soc., Boston, Mass. (1990).
E. G. Bauer et al., Mat. Res. 5, 852 (1990).
S. P. S. Arya et al., Thin Solid Films 157, 267 (1988).
H. Sankur et al., Appl. Phys. A 47, 271 (1988).
B. E. Williams et al., J. Mat. Res. 4, 373 (1989).
J. S. Speck et al., J. Mat. Res. 5, 980 (1990).
S. J. Thomas et al., Appl. Phys. Lett. 40, 200 (1982).
J. E. Rothenberg et al., Nucl. Instr. and Meth. B1, 291 (1984).
G. L. Doll et al., "Effects of Excimer Laser Ablation on the Surfaces of Hexagonal Boron Nitride Targets", Mat. Res. Soc., Boston, Mass. (1990).
Doll Gary L.
Peck Charles A.
Sell Jeffrey A.
Brooks Cary W.
General Motors Corporation
Kalinchak Stephen G.
Lewis Michael L.
LandOfFree
Laser deposition of crystalline boron nitride films does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Laser deposition of crystalline boron nitride films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Laser deposition of crystalline boron nitride films will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-539139