Laser crystallization and selective patterning using...

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor

Reexamination Certificate

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C117S046000

Reexamination Certificate

active

10525283

ABSTRACT:
A process and system for processing a thin film sample, as well as the thin film structure are provided. In particular, a beam generator can be controlled to emit successive irradiation beam pulses at a predetermined repetition rate. Each irradiation beam pulse may be masked to define a first plurality of beamlets and a second plurality of beamlets. The first and second plurality of beamlets of each of the irradiation pulses being provided for impinging the film sample and having an intensity which is sufficient to at least partially melt irradiated portions of the section of the film sample. A particular portion of the section of the film sample is irradiated with the first beamlets of a first pulse of the irradiated beam pulses to melt first areas of the particular portion, the first areas being at least partially melted, leaving first unirradiated regions between respective adjacent ones of the first areas, and being allowed to resolidify and crystallize. After the irradiation of the particular portion with the first beamlets, the particular portion is again irradiated with the second beamlets of a second pulse of the irradiated beam pulses to melt second areas of the particular portion, the second areas being at least partially melted, leaving second unirradiated regions between respective adjacent ones of the second areas, and being allowed to resolidify and crystallize. The first irradiated and re-solidified areas and the second irradiated and re-solidified areas are intermingled with one another within the section of the film sample. In addition, the first areas correspond to first pixels, and the second areas correspond to second pixels.

REFERENCES:
patent: 3632205 (1972-01-01), Marcy
patent: 4234358 (1980-11-01), Celler et al.
patent: 4309225 (1982-01-01), Fan et al.
patent: 4382658 (1983-05-01), Shields et al.
patent: 4456371 (1984-06-01), Lin
patent: 4639277 (1987-01-01), Hawkins
patent: 4691983 (1987-09-01), Kobayashi et al.
patent: 4727047 (1988-02-01), Bolzer et al.
patent: 4758533 (1988-07-01), Magee et al.
patent: 4793694 (1988-12-01), Liu
patent: 4800179 (1989-01-01), Mukai
patent: 4855014 (1989-08-01), Kakimoto et al.
patent: 4870031 (1989-09-01), Suguhara et al.
patent: 4940505 (1990-07-01), Schachameyer et al.
patent: 4970546 (1990-11-01), Suzuki et al.
patent: 4977104 (1990-12-01), Sawada et al.
patent: 5032233 (1991-07-01), Yu et al.
patent: 5061655 (1991-10-01), Ipposhi et al.
patent: RE33836 (1992-03-01), Resor, III et al.
patent: 5145808 (1992-09-01), Sameshima et al.
patent: 5204659 (1993-04-01), Sarma
patent: 5233207 (1993-08-01), Anzai
patent: 5285236 (1994-02-01), Jain
patent: 5291240 (1994-03-01), Jain
patent: 5304357 (1994-04-01), Sato et al.
patent: 5373803 (1994-12-01), Noguchi et al.
patent: 5395481 (1995-03-01), McCarthy
patent: 5409867 (1995-04-01), Asano
patent: 5453594 (1995-09-01), Konecny
patent: 5456763 (1995-10-01), Kaschmitter et al.
patent: 5496768 (1996-03-01), Kudo
patent: 5523193 (1996-06-01), Nelson
patent: 5529951 (1996-06-01), Noguchi et al.
patent: 5591668 (1997-01-01), Maegawa et al.
patent: 5721606 (1998-02-01), Jain
patent: 5742426 (1998-04-01), York
patent: 5756364 (1998-05-01), Tanaka et al.
patent: 5766989 (1998-06-01), Maegawa et al.
patent: 5844588 (1998-12-01), Anderson
patent: 5861991 (1999-01-01), Fork
patent: 5893990 (1999-04-01), Tanaka
patent: 5986807 (1999-11-01), Fork
patent: 6014944 (2000-01-01), Russell et al.
patent: 6072631 (2000-06-01), Guenther et al.
patent: 6081381 (2000-06-01), Shalapenok et al.
patent: 6117752 (2000-09-01), Suzuki
patent: 6120976 (2000-09-01), Treadwell et al.
patent: 6130009 (2000-10-01), Smith et al.
patent: 6130455 (2000-10-01), Yoshinouchi
patent: 6156997 (2000-12-01), Yamazaki et al.
patent: 6162711 (2000-12-01), Ma et al.
patent: 6169014 (2001-01-01), McCulloch
patent: 6172820 (2001-01-01), Kuwahara
patent: 6177301 (2001-01-01), Jung
patent: 6187088 (2001-02-01), Okumura
patent: 6190985 (2001-02-01), Buynoski
patent: 6193796 (2001-02-01), Yang
patent: 6203952 (2001-03-01), O'Brien et al.
patent: 6235614 (2001-05-01), Yang
patent: 6242291 (2001-06-01), Kusumoto et al.
patent: 6285001 (2001-09-01), Fleming et al.
patent: 6300175 (2001-10-01), Moon
patent: 6313435 (2001-11-01), Shoemaker et al.
patent: 6316338 (2001-11-01), Jung
patent: 6320227 (2001-11-01), Lee et al.
patent: 6322625 (2001-11-01), Im
patent: 6326186 (2001-12-01), Kirk et al.
patent: 6326286 (2001-12-01), Park et al.
patent: 6333232 (2001-12-01), Kunikiyo
patent: 6368945 (2002-04-01), Im
patent: 6388146 (2002-05-01), Onishi et al.
patent: 6407012 (2002-06-01), Miyasaka et al.
patent: 6444506 (2002-09-01), Kusumoto et al.
patent: 6468845 (2002-10-01), Nakajima et al.
patent: 6495067 (2002-12-01), Ono
patent: 6511718 (2003-01-01), Paz de Araujo et al.
patent: 6521492 (2003-02-01), Miyasaka et al.
patent: 6526585 (2003-03-01), Hill
patent: 6528359 (2003-03-01), Kusumoto et al.
patent: 6555449 (2003-04-01), Im et al.
patent: 6563077 (2003-05-01), Im
patent: 6573531 (2003-06-01), Im et al.
patent: 6582827 (2003-06-01), Im
patent: 6621044 (2003-09-01), Jain et al.
patent: 6635554 (2003-10-01), Im et al.
patent: 6645454 (2003-11-01), Voutsas
patent: 6830993 (2004-12-01), Im et al.
patent: 2001/0001745 (2001-05-01), Im et al.
patent: 2001/0041426 (2001-11-01), Im
patent: 2002/0104750 (2002-08-01), Ito
patent: 2003/0029212 (2003-02-01), Im
patent: 2003/0096489 (2003-05-01), Im et al.
patent: 2003/0119286 (2003-06-01), Im et al.
patent: 2004/0053450 (2004-03-01), Sposili et al.
patent: 2004/0061843 (2004-04-01), Im
patent: 2005/0032249 (2005-02-01), Im et al.
patent: 2005/0034653 (2005-02-01), Im et al.
patent: 681316 (1995-08-01), None
patent: 655774 (1996-07-01), None
patent: 1067593 (2001-10-01), None
patent: 2338342 (1999-12-01), None
patent: 2338343 (1999-12-01), None
patent: 2338597 (1999-12-01), None
patent: 62181419 (1987-08-01), None
patent: 2001023920 (2001-01-01), None
patent: 9745827 (1997-12-01), None
patent: 9824118 (1998-06-01), None
patent: 9931719 (1999-06-01), None
patent: 0014784 (2000-03-01), None
patent: 0118854 (2001-03-01), None
patent: 0118855 (2001-03-01), None
patent: 0171786 (2001-09-01), None
patent: 0231869 (2002-04-01), None
patent: 0242847 (2002-05-01), None
patent: 0286954 (2002-05-01), None
patent: 02086955 (2002-10-01), None
patent: 03018882 (2003-03-01), None
patent: 03046965 (2003-06-01), None
patent: 03084688 (2003-10-01), None
patent: 2004017379 (2004-02-01), None
patent: 2004017380 (2004-02-01), None
patent: 2004017381 (2004-02-01), None
patent: 2004017382 (2004-02-01), None
patent: 2004075263 (2004-09-01), None
U.S. Appl. No. 60/253,256, filed Aug. 31, 2003, Im.
Im et al., “Controlled Super-Lateral Growth of Si Films for Microstructural Manipulation and Optimization”, Phys. Stat. Sol. (a), vol. 166, p. 603 (1998).
S.D. Brotherton et al., “Influence of Melt Depth in Laser Crystallized Poly-Si Thin Film Transistors”, 82 J. Appl. Phys. 4086 (1997).
J.S. Im et al., “Crystalline Si Films for Integrated Active-Matrix Liquid-Crystals Displays,” 21 MRS Bulletin 39 (1996).
Im et al., “Single-Crystal Si Films for Thin-Film Transistor Devices,” Appl. Phys. Lett., vol. 70 (25), p. 3434 (1997).
Sposili et al., “Sequential Lateral Solidification of Thin Silicon Films on SiO2”, Appl, Phys. Lett., vol. 69 (19), p. 2864 (1996).
Crowder et al., “Low-Temperature Single-Crystal Si TFTs Fabricated on Si Films processed via Sequential Lateral Solidification”, IEEE Electron Device Letter, vol. 19 (8), p. 306 (1998).
Sposili et al., “Single-Crystal Si Films via a Low-Substrate-Temperature Excimer-Laser Crystallization Method”, Mat. Res. Soc. Symp. Proc. vol. 452, pp. 953-958, 1997 Materials Reasearch Society.
C. E. Nebel, “Laser Interference Structuring of A-SI:h” Amorphous Silicon Technology—1996, San Francisco, CA Apr. 8-12, 1996, Materials Research Society Symposium Proceedings, vol. 420, Pittsburgh, PA.
J. H. Jeon et al., “Two-step laser recrystallization of poly-Si for effective

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