Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-03-08
2005-03-08
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S705000, C438S048000, C438S022000
Reexamination Certificate
active
06864190
ABSTRACT:
Disclosed is a process for fabricating luminescent porous material, the process comprising pre-treating a substrate (e.g. crystalline silicon) with laser radiation (e.g from a Nd:YAG laser) in a predetermined pattern followed by exposing the irradiated substrate to a chemical stain etchant (e.g. HF:HNO3:H2O) to produce a luminescent nanoporous material. Luminescent porous material having a luminescence maximum greater than about 2100 meV may be produced by this method. Such nanoporous materials are useful in optoelectronic and other semiconductor devices.
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Han Yujie
Luan Ben Li
Nagata John
Nikumb Suwas
Anissimoff & Associates
Le Dung A.
National Research Council of Canada
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