Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1992-04-08
1994-06-14
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257754, 257758, 257760, 257775, H01L 2702, H01L 2348
Patent
active
053213009
ABSTRACT:
In a laser-broken fuse used in a memory redundancy technique, an aluminum wiring layer is formed on an interlevel insulating film. A portion of the wiring layer is selected to be broken to shut off conduction of the layer. A polysilicon-made heat member is provided in the interlevel insulating film at the place which is underneath the selected portion. The heat member is located on a field insulating film. This heat member generates heat by absorbing energy from a laser beam, and thermal-explodes in a sealed atmosphere so as to break the selected portion.
REFERENCES:
patent: 4826785 (1989-05-01), McClure et al.
patent: 4935801 (1990-06-01), McClure et al.
Itaba Hiroaki
Kaki Seiji
Kumagai Jumpei
Usuda Yoshio
Kabushiki Kaisha Toshiba
Prenty Mark V.
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