Laser bilayer etching of GaAs surfaces

Details Laser bilayer etching of GaAs surfaces Laser bilayer etching of GaAs surfaces

1990-07-10

1992-08-18

Schor, Kenneth M.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156656, 156662, 156655, 430313, H01L 21306

Patent

active

051396068

ABSTRACT:
A method of etching the surface of a substrate in a closed environment including the steps of contacting the surface of the substrate with a molecular chlorine etching gas, allowing a passivation layer to form on the surface of the substrate with atomic layer precision, and photochemically removing at least a portion of the passivation layer by irradiating the portion without destruction of the layer of material immediately underlying the passivation layer.

REFERENCES:
patent: 4462846 (1984-07-01), Varshney
patent: 4494997 (1985-01-01), Lemnios et al.
patent: 4632710 (1986-12-01), Van Rees
patent: 4648936 (1987-03-01), Ashby
patent: 4731158 (1988-03-01), Brannon
patent: 4732873 (1988-03-01), Perbet et al.
patent: 4746622 (1988-05-01), Hawkins et al.
patent: 4877757 (1989-10-01), York et al.
M. Balooch, D. R. Olander, "The thermal and ion-assisted reaction of GaAs (100) with molecular chlorine", J. Vac. Science Technology, B 4(4) (1986), pp. 794-805.
P. Brewer, "Large Area Laser-Assisted Etching of Electronic Materials", Proc. SPIE, vol. 611 (1986), pp. 62-69.
J. J. Ritsko, F. Ho, J. Hurst, "Laser assisted chemical etching of copper", Appl. Phys. Lett., vol. 53(1) (1988), pp. 78-80.
W. Sesselman, T. J. Chuang, "Chlorine surface interaction and laser-induced surface etching reactions", J. Vac. Sci. Technology, vol. B 3(5) (1985), pp. 1507-1512.
A. W. Tucker, M. Birnbaum, "Laser Chemical Etching of Vias in GaAs", IEEE Electron Device Letters, vol. EDL-4, No. 2 (1983), pp. 39-41.
D. J. Ehrlich, R. M. Osgood, T. F. Deutsch, "Laser-induced microscopic etching of GaAs and InP", Appl. Phys. Letts., vol. 36(8), (1980), pp. 698-700.
P. Brewer, D. McClure, R. M. Osgood, "Excimer laser projection etching of GaAs", Appl. Phys. Lett., vol. 49(13) (1986), pp. 803-805.
M. Hirose, S. Yokoyama, Y. Yamakage, "Characterization of photochemical processing", J. Vac. Sci. Technology, vol. B 3(5) (1985), pp. 1445-1449.
C. Ashby, "Photochemical dry etching of GaAs", Appl. Phys. Lett., vol. 45(8), (1984), pp. 892-894.
R. Osgood, "An Overview of Laser Chemical Processing", Mat. Res. Symp. Proc., vol. 74 (1987), pp. 75-87.

Affiliated with

Also associated with

Rating

Laser bilayer etching of GaAs surfaces does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Laser bilayer etching of GaAs surfaces, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Laser bilayer etching of GaAs surfaces will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1245953