Laser beam pattern mask and crystallization method using the...

Details Laser beam pattern mask and crystallization method using the... Laser beam pattern mask and crystallization method using the...

2005-06-03

2008-07-15

Robinson, Mark A. (Department: 4122)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C438S482000, C438S486000

Reexamination Certificate

active

07399685

ABSTRACT:
A laser beam pattern mask includes an opaque substrate and a plurality of transmission portions formed in the substrate to transmit light, wherein each of the transmission portions extend in a first direction while being uniformly spaced apart from one another by a predetermined distance in a second direction perpendicular to the first direction, each of the transmission portions including hexagonal cells arranged in the first direction and in contact with one another.

REFERENCES:
patent: 6337233 (2002-01-01), Yang
patent: 6736895 (2004-05-01), Jung
patent: 2003/0022421 (2003-01-01), Shimoto et al.
Robert S. Sposilli, et al. “Single-Crystal Si Films via a Low-Subsgtrate-Temperature Excimer-Laser Crystallization Method,” Materials Research Society Symp. Proc. vol. 452, pp. 953-958, 1997.

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