Laser beam irradiating apparatus, laser beam irradiating...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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C257SE21561

Reexamination Certificate

active

07445974

ABSTRACT:
A laser beam irradiating apparatus comprising, a plurality of lasers, member for synthesizing a plurality of laser beams emitted respectively from the plurality of lasers into a single laser beam on a stage, and member for moving the synthesized laser beam on the stage while keeping a specific shape thereof. A semiconductor film can be crystallized or an impurity element doped therein can be activated by irradiating a laser beam to the semiconductor film from the laser beam irradiating apparatus arranged as above. Consequently, it is possible to provide a laser beam irradiating apparatus capable of achieving uniform annealing efficiently by employing an optical system simpler than a conventional one and using laser beams having attenuated regions. Also, it is possible to provide a method of irradiating a laser beam using the laser beam irradiating apparatus, and to provide a method of manufacturing a semiconductor device including the laser beam irradiating method in the fabrication sequence thereof.

REFERENCES:
patent: 4330363 (1982-05-01), Biegesen et al.
patent: 4370175 (1983-01-01), Levatter
patent: 4566043 (1986-01-01), Tamura
patent: 4668089 (1987-05-01), Oshida et al.
patent: 4715318 (1987-12-01), Kameyama et al.
patent: 4978970 (1990-12-01), Okazaki
patent: 5558788 (1996-09-01), Mashburn
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5803965 (1998-09-01), Yoon
patent: 5854803 (1998-12-01), Yamazaki et al.
patent: 5869803 (1999-02-01), Noguchi et al.
patent: 5886320 (1999-03-01), Gallo et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5953597 (1999-09-01), Kusumoto et al.
patent: 6043453 (2000-03-01), Arai
patent: 6204099 (2001-03-01), Kusumoto et al.
patent: 6210996 (2001-04-01), Yamazaki et al.
patent: 6265745 (2001-07-01), Kusumoto et al.
patent: 6285042 (2001-09-01), Ohtani et al.
patent: 6335541 (2002-01-01), Ohtani et al.
patent: 6365933 (2002-04-01), Yamazaki et al.
patent: 6396616 (2002-05-01), Fitzer et al.
patent: 6468842 (2002-10-01), Yamazaki et al.
patent: 6506635 (2003-01-01), Yamazaki et al.
patent: 6567219 (2003-05-01), Tanaka
patent: 6573162 (2003-06-01), Tanaka et al.
patent: 6590230 (2003-07-01), Yamazaki et al.
patent: 6650480 (2003-11-01), Tanaka
patent: 6700096 (2004-03-01), Yamazaki et al.
patent: 6849482 (2005-02-01), Yamazaki et al.
patent: 6849825 (2005-02-01), Tanaka
patent: 2001/0019861 (2001-09-01), Yamazaki et al.
patent: 2002/0094008 (2002-07-01), Tanaka
patent: 2002/0100937 (2002-08-01), Yamazaki et al.
patent: 2003/0089691 (2003-05-01), Tanaka
patent: 2003/0112322 (2003-06-01), Tanaka
patent: 2005/0092998 (2005-05-01), Yamazaki et al.
patent: 2005/0111339 (2005-05-01), Tanaka
patent: 0 827 196 (1998-03-01), None
patent: 56-067277 (1981-06-01), None
patent: 61-239619 (1986-10-01), None
patent: 62-104117 (1987-05-01), None
patent: 62-259437 (1987-11-01), None
patent: 01-146319 (1989-06-01), None
patent: 02-056932 (1990-02-01), None
patent: 02-181419 (1990-07-01), None
patent: 03-085729 (1991-04-01), None
patent: 03-232223 (1991-10-01), None
patent: 04-282869 (1992-10-01), None
patent: 05-226790 (1993-09-01), None
patent: 05-315278 (1993-11-01), None
patent: 06-163401 (1994-06-01), None
patent: 07-041845 (1995-02-01), None
patent: 07-326769 (1995-12-01), None
patent: 08-078329 (1996-03-01), None
patent: 08-213629 (1996-08-01), None
patent: 09-270393 (1997-10-01), None
patent: 10-135343 (1998-05-01), None
patent: 11-125839 (1999-05-01), None
patent: 11-145087 (1999-05-01), None
patent: 11-340160 (1999-12-01), None
patent: 2000-299470 (2000-10-01), None
patent: 3221724 (2001-10-01), None
patent: 2001127004 (2001-11-01), None
patent: 2003-243321 (2003-08-01), None
Hara et al.,Ultra-High Performance Poly-Si TFTs on a Glass by a Stable Scanning CW Laser Lateral Crystallization, AM-LCD '01, pp. 227-230.
Takeuchi et al.,Performance of Poly-Si TFTs Fabricated by a Stable Scanning CW Laser Crystallization, AM-LCD '01, pp. 251-254.

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