Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of... – Compound semiconductor
Reexamination Certificate
2007-05-01
2007-05-01
Pert, Evan (Department: 2826)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
Compound semiconductor
C438S463000, C438S106000, C438S113000, C438S667000, C438S584000, C438S462000, C219S121670, C219S121720, C257S620000
Reexamination Certificate
active
11058163
ABSTRACT:
A laser splitting method for splitting off a segment from an object to be split using a laser beam, includes a surface processing step of processing the object by forming a linear recessed portion in a surface of the object, the linear recessed portion being effective to cause a stress concentration at the surface of the object; an internal processed-region forming step of forming an internal processed-regions at a depth of the object in a line along which a laser beam scans the surface of the object by a relative motion therebetween, the laser beam being converged adjacent the depth, wherein the thus formed internal processed-regions extend in a direction substantially perpendicular to the surface of the object; and an external force applying step of applying an external force to the object to form cracks between the recessed portion and the internal processed-regions.
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Inada Genji
Iri Junichiro
Morimoto Hiroyuki
Nishiwaki Masayuki
Sugama Sadayuki
Erdem Fazli
Pert Evan
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