Laser based method and system for integrated circuit repair or r

Details Laser based method and system for integrated circuit repair or r Laser based method and system for integrated circuit repair or r

1997-07-22

2000-02-15

Tsai, Jey

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438132, H01L 2144

Patent

active

060252561

ABSTRACT:
The present invention provides a method and system for irradiating resist material from multiple target positions (150) on one or more IC chips (12) with individually directed laser output pulses (74, 94). In one embodiment, an IC (12), including one or more etch targets (104, 106) such as conductive links (72, 92), is coated with an etch protection layer (90) of photoresist material. Then, position data direct, toward multiple positions (150) on the photoresist material, individual laser output pulses (94) of predetermined parameters selected to expose the photoresist material. Because photoresist exposure requires less energy than link blowing, low-power UV lasers (120) can be employed, and their shorter wavelengths permit a smaller practical laser output spot size (98). Because the nonablative process does not generate debris, an optical component (148) can be brought within 10 mm of etch protection layer (90) to focus the laser output pulses (94) to a spot size of less than two times the wavelength of laser output (140). Thus, an advantage of this embodiment permits microcircuit manufacturers to decrease the pitch distance (28) between circuit elements (14). After the photoresist layer (90) is developed, the accessible etch target (92) can be etched to repair or reconfigure the IC device. In another embodiment, slightly higher UV power laser output pulses (74) can be employed to ablate an etch protection resist layer (70) so any type of etch protection coating such as nonphotosensitive resist materials can be utilized with substantial manufacturing and cost benefits. Etching of the accessible etch targets (60, 62) follows this process.

REFERENCES:
patent: 4228528 (1980-10-01), Cenker et al.
patent: 4414059 (1983-11-01), Blum et al.
patent: 4445978 (1984-05-01), Whartenby et al.
patent: 4508749 (1985-04-01), Brannon et al.
patent: 4532402 (1985-07-01), Overbeck
patent: 4568409 (1986-02-01), Caplan
patent: 4598039 (1986-07-01), Fischer et al.
patent: 4599136 (1986-07-01), Araps et al.
patent: 4602420 (1986-07-01), Saito
patent: 4615904 (1986-10-01), Ehrlich et al.
patent: 4619894 (1986-10-01), Bozler et al.
patent: 4622058 (1986-11-01), Leary-Renick et al.
patent: 4622095 (1986-11-01), Grobman et al.
patent: 4640738 (1987-02-01), Fredericks et al.
patent: 4647476 (1987-03-01), Anthony
patent: 4684437 (1987-08-01), Donelon et al.
patent: 4700214 (1987-10-01), Johnson
patent: 4720470 (1988-01-01), Johnson
patent: 4780177 (1988-10-01), Wojnarowski et al.
patent: 4795720 (1989-01-01), Kawanabe et al.
patent: 4796038 (1989-01-01), Allen et al.
patent: 4806921 (1989-02-01), Goodman et al.
patent: 4832788 (1989-05-01), Nemiroff
patent: 4834834 (1989-05-01), Ehrlich et al.
patent: 4853758 (1989-08-01), Fischer
patent: 4894115 (1990-01-01), Eichelberger et al.
patent: 4897153 (1990-01-01), Cole et al.
patent: 4941082 (1990-07-01), Pailthorp et al.
patent: 4943032 (1990-07-01), Zdeblick
patent: 4965702 (1990-10-01), Lott et al.
patent: 4970369 (1990-11-01), Yamazaki et al.
patent: 5021362 (1991-06-01), Chlipala
patent: 5066998 (1991-11-01), Fischer et al.
patent: 5087396 (1992-02-01), Zablotony et al.
patent: 5096850 (1992-03-01), Lippitt, III
patent: 5153408 (1992-10-01), Handford et al.
patent: 5185291 (1993-02-01), Fischer et al.
patent: 5206874 (1993-04-01), Opower
patent: 5236551 (1993-08-01), Pan
patent: 5245751 (1993-09-01), Locke et al.
patent: 5265114 (1993-11-01), Sun et al.
patent: 5289416 (1994-02-01), Iwai et al.
patent: 5293025 (1994-03-01), Wang
patent: 5329152 (1994-07-01), Janai et al.
patent: 5331203 (1994-07-01), Wojnarowski et al.
patent: 5391516 (1995-02-01), Wojnarowski et al.
patent: 5536579 (1996-07-01), Davis et al.
patent: 5541731 (1996-07-01), Freedenberg et al.
patent: 5593606 (1997-01-01), Owen et al.
patent: 5731047 (1998-03-01), Noddin
Brannon, James H., "Excimer-Laser Ablation and Etching," Sep. 1990, Circuits and Devices Magazine pp 19-24.
Allen, R.D. et al, "New Single-Layer Positive Resists for 193-and 248-nm Lithography Using Methacrylate Polymers," Solid State Technology, Nov. 1993, pp 53-66.
Smith, Robert T. et al, "Laser Programmable Redundancy and Yield Improvement in a 64K DRAM," IEEE Journal of Solid-State Circuits, vol. SC-16, No. 5, (Oct. 1981), pp 506-514.
Table of Contents from "Handbook of Microlithography, Micromachining, and Microfabrication" vol. 1 Edited by P. Rai--Choudbury; SPIE vol. PM39.
Smart and Stewart, "Laser Processing for Application Specific Integrated Circuits (ASICs)", Lasers in Microlithography, vol. 774, Mar. 2-3, 1987, Pub. by SPIE, Santa Clara, California.

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