Laser assisted plasma chemical etching method

Details Laser assisted plasma chemical etching method Laser assisted plasma chemical etching method

1995-05-01

1998-08-18

Dang, Thi

Etching a substrate: processes

Gas phase etching of substrate

With measuring, testing, or inspecting

1566431, 1566621, 216 59, 216 60, 216 65, 216 67, H01L 2100

Patent

active

057954933

ABSTRACT:
A scaleable laser and control unit (58) is used to differentially heat portions of a semiconductor substrate (40) during downstream etching. Such differential heating provides a differential etch rate for each portion heated resulting in improved uniformity and reduced etch induced surface damage. An etching chamber (50) capable of containing the downstream plasma and providing a direct line of sight between the substrate (40) and the scanable laser unit (58) is provided. In addition, the system provides for dynamic updating of the process by in situ etch rate and temperature measurements.

REFERENCES:
patent: 5183531 (1993-02-01), Terakado
patent: 5223080 (1993-06-01), Ohta et al.
patent: 5254830 (1993-10-01), Zarowin et al.
patent: 5375064 (1994-12-01), Bollinger
patent: 5376215 (1994-12-01), Ohta et al.
patent: 5376224 (1994-12-01), Zarowin
patent: 5393370 (1995-02-01), Ohta et al.

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