Laser assisted lift-off

Details Laser assisted lift-off Laser assisted lift-off

1982-06-02

1984-05-15

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156644, 156652, 156655, 1562728, 156344, 219121LH, 219121LM, 427 88, 427 531, B44C 122, C03C 1500, B23K 900, B05D 512

Patent

active

044486367

ABSTRACT:
A method for selective removal of metallization in integrated circuits. A uniform metal film is applied over a patterned resist layer. A short pulse of radiant energy is then applied to the whole surface of the metal film. The resist underneath the metal film is locally heated enough to cause outgassing, which breaks the mechanical bond between the metal film and the resist. The metal film over the patterned resist layer is then removed, leaving the deposited metal film in place over areas which were not covered by the resist film.

REFERENCES:
patent: 3723277 (1973-03-01), Schmiedecke
patent: 3748246 (1973-07-01), Goell
patent: 3790744 (1974-02-01), Bowen
patent: 4119483 (1978-10-01), Hubsch et al.

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