Laser assisted cryoetching

Details Laser assisted cryoetching Laser assisted cryoetching

1997-05-15

1998-04-21

Breneman, R. Bruce

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

216 74, 438708, B44C 122, H01L 21302

Patent

active

057414319

ABSTRACT:
Effective etching of several materials, including gallium nitride and gallium arsenide, without post etch surface damage has been achieved by using a mix of equal proportions of chlorine and methane. A sample is first cooled to a temperature of around 140.degree. K and is then irradiated by a series of pulses from a UV laser (for example a 193 nm ArF excimer laser). Using fluences of about 400 mJ/cm.sup.2 per pulse at repetition rates of about 10 pulses/second, an etch rate for gallium nitride of about 0.7 Angstroms per pulse was achieved. Typical pressure for the chlorine methane mix was about 2 mtorr. To achieve selective etching a number of approaches are possible including contact masking, projection printing, raster scanning, and moveable shadow masking with collimated laser light.

REFERENCES:
patent: 5112645 (1992-05-01), Sekine et al.
"Patterned, Photon-Driven, Cryoetching of GaAs and AlGaAs" by MC Shih et al, J. Vac. Sci Technology, vol. 13, 1995, pp. 43-54.
"Surface Chemical Reactions Studied by Laser Spectroscopy"; Kawasaki; 1990; Reza Kenkyu, 18(4), pp. 194-202; ISSN: 0387-0200.

Affiliated with

Also associated with

Rating

Laser assisted cryoetching does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Laser assisted cryoetching, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Laser assisted cryoetching will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2054916