Laser assisted chemical vapor deposition for backside die...

Details Laser assisted chemical vapor deposition for backside die... Laser assisted chemical vapor deposition for backside die...

2008-09-17

2010-10-05

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S106000, C438S681000, C257SE21006, C257SE21170, C257SE21324, C257SE21327, C257SE21328, C257SE21347, C257SE21475, C257SE21547

Reexamination Certificate

active

07807573

ABSTRACT:
Methods of forming a microelectronic structure are described. Embodiments of those methods include forming an identification mark on a portion of a backside of an individual die of a wafer by utilizing laser assisted CVD, wherein the formation of the identification mark is localized to a focal spot of the laser.

REFERENCES:
patent: 6172454 (2001-01-01), Hofmann
patent: 6530649 (2003-03-01), Pan
patent: 6744114 (2004-06-01), Dentry et al.
patent: 7166493 (2007-01-01), Dentry et al.

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