Laser annealing method for manufacturing semiconductor device

Details Laser annealing method for manufacturing semiconductor device Laser annealing method for manufacturing semiconductor device

2011-03-15

2011-03-15

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S486000, C438S648000

Reexamination Certificate

active

07906419

ABSTRACT:
A laser annealing method for manufacturing a semiconductor device is presented. The method includes at least two forming steps and one annealing step. The first forming steps includes forming gates on a semiconductor substrate. The second forming step includes forming an insulation layer on the semiconductor substrate and on the gates. The annealing step includes annealing the insulation layer using electromagnetic radiation emitted from a laser.

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