Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-09-18
2007-09-18
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C117S008000, C134S001300
Reexamination Certificate
active
10921872
ABSTRACT:
In order to promote an effect of laser annealing in respect of a semiconductor film, moisture is intentionally included in an atmosphere in irradiating laser beam to the semiconductor film by which a temperature holding layer comprising water vapor is formed on the surface of the semiconductor film in irradiating the laser beam and the laser annealing operation can be performed effectively.
REFERENCES:
patent: 4343829 (1982-08-01), Tochikubo et al.
patent: 5525550 (1996-06-01), Kato
patent: 5604153 (1997-02-01), Tsubouchi et al.
patent: 5608232 (1997-03-01), Yamazaki et al.
patent: 5776812 (1998-07-01), Takahashi et al.
patent: 5843833 (1998-12-01), Ohtani et al.
patent: 5854096 (1998-12-01), Ohtani et al.
patent: 5899709 (1999-05-01), Yamazaki et al.
patent: 5956579 (1999-09-01), Yamazaki et al.
patent: 5956581 (1999-09-01), Yamazaki et al.
patent: 6027960 (2000-02-01), Kusumoto et al.
patent: 6061375 (2000-05-01), Zhang et al.
patent: 6066516 (2000-05-01), Miyasaka
patent: 6071796 (2000-06-01), Voutsas
patent: 6093243 (2000-07-01), Okada et al.
patent: 6124154 (2000-09-01), Miyasaka
patent: 6242291 (2001-06-01), Kusumoto et al.
patent: 6255148 (2001-07-01), Hara et al.
patent: 6329269 (2001-12-01), Hamada et al.
patent: 6348369 (2002-02-01), Kusumoto et al.
patent: 6528359 (2003-03-01), Kusumoto et al.
patent: 6580053 (2003-06-01), Voutsas
patent: 6927419 (2005-08-01), Hara et al.
patent: 7041580 (2006-05-01), Kusumoto et al.
patent: 2002/0153360 (2002-10-01), Yamazaki et al.
patent: 2004/0099220 (2004-05-01), Tsao
patent: 2004/0106242 (2004-06-01), Arao et al.
patent: 2004/0224446 (2004-11-01), Yeh
patent: 2005/0019997 (2005-01-01), Kusumoto et al.
patent: 2005/0020096 (2005-01-01), Miyairi et al.
patent: 2005/0112850 (2005-05-01), Yamazaki et al.
patent: 2005/0236692 (2005-10-01), Hara et al.
patent: 2005/0257738 (2005-11-01), Tateishi et al.
patent: 2006/0030131 (2006-02-01), Richardson et al.
patent: 2006/0051903 (2006-03-01), Kunii
patent: 2006/0079040 (2006-04-01), Tanaka et al.
patent: 2006/0118036 (2006-06-01), Takeda et al.
patent: 2006/0183276 (2006-08-01), Yamazaki et al.
patent: 2006/0252186 (2006-11-01), Nakajima et al.
patent: 60-040683 (1985-03-01), None
patent: 60-041266 (1985-03-01), None
patent: 1-231315 (1989-09-01), None
patent: 2-196098 (1990-08-01), None
patent: 06-244104 (1994-02-01), None
patent: 07-201876 (1995-08-01), None
patent: 07-283151 (1995-10-01), None
patent: 07-307286 (1995-11-01), None
patent: 11-8205 (1999-01-01), None
patent: 2002-75904 (2002-03-01), None
patent: 2004-024758 (2004-03-01), None
Kusumoto Naoto
Tanaka Koichiro
Yamazaki Shunpei
Fish & Richardson P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Wilczewski M.
LandOfFree
Laser annealing method and laser annealing device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Laser annealing method and laser annealing device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Laser annealing method and laser annealing device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3738501