Laser annealing method and apparatus

Details Laser annealing method and apparatus Laser annealing method and apparatus

2007-12-04

2007-12-04

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C438S487000

Reexamination Certificate

active

10273755

ABSTRACT:
A linear pulse laser beam to be applied to an illumination surface is so formed as to have, at the focus, an energy profile in the width direction which satisfies inequalities 0.5L1≦L2≦L1and 0.5L1≦L3≦L1where assuming that a maximum energy is 1, L1is a beam width of two points having an energy of 0.95 and L1+L2+L3is a beam width of two points having an energy of 0.70, L2and L3occupying two peripheral portions of the beam width. According to another aspect of the invention, a compound-eye-like fly-eye lens for expanding a pulse laser beam in a sectional manner is provided upstream of a cylindrical lens for converging the laser beam into a linear beam.

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