Laser annealing method

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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Details

C438S149000, C438S157000

Reexamination Certificate

active

11041413

ABSTRACT:
The semiconductor device according to the present invention has a semiconductor layer having not smaller than two types of crystal grains different in size within a semiconductor circuit on a same substrate.

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M. Jyumonji, et al., “High-Resolution Beam Profiler—New Powerful Tool for Engineering Laterally-Grown Grain Morphology-”, AMDp-17 (Late-News Paper), IDW '02, pp. 1387-1388.
Ryoichi Ishihara, et al., “Effects of Light Pulse Duration on Excimer-Laser Crystallization Characteristics of Silicon Thin Films”, Jpn. J. Appl. Phys. vol. 34, Part 1, No. 4A, Apr. 1995, pp. 1759-1764.
Masayuki Jyumonji, et al., “Double Pulse Method for Enlarging Lateral Grain Growth of Excimer Laser Annealed Poly-Si Thin Films”, The Institute of Physical and Chemical Research, NEC Res. & Develop., vol. 42, No. 3, Jul. 2001, pp. 272-276.

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