Laser annealing method

Details Laser annealing method Laser annealing method

2011-05-10

2011-05-10

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

Reexamination Certificate

active

07939435

ABSTRACT:
In crystallizing an amorphous silicon film by illuminating it with linear pulse laser beams having a normal-distribution type beam profile or a similar beam profile, the linear pulse laser beams are applied in an overlapped manner. There can be obtained effects similar to those as obtained by a method in which the laser illumination power is gradually increased and then decreased in a step-like manner in plural scans.

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