Laser annealing for growth of single crystal semiconductor areas

Details Laser annealing for growth of single crystal semiconductor areas Laser annealing for growth of single crystal semiconductor areas

1981-10-29

1983-06-14

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG88, C30B 1306

Patent

active

043881459

ABSTRACT:
A method for laser induced conversion of large predefined areas of amorphous or polycrystalline semiconductor material, upon a substrate, into single crystal areas by using an infrared laser energy source to cause the bulk of heating to occur in the substrate and not in the predefined areas so that the areas are heated to melting by the substrate. The substrate comprises a material which is highly absorptive of the laser wavelength and the predefined areas comprise a material substantially transparent to laser wavelength, and the substrate and areas have different refractive indexes.

REFERENCES:
patent: 3585088 (1971-06-01), Schwuttke et al.
patent: 4174422 (1979-11-01), Mathews et al.
patent: 4330363 (1982-05-01), Biegesen et al.

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