Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-05-24
2011-05-24
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21348
Reexamination Certificate
active
07947599
ABSTRACT:
A laser annealing method for annealing a stacked semiconductor structure having at least two stacked layers is disclosed. A laser beam is focused on a lower layer of the stacked layers. The laser beam is then scanned to anneal features in the lower layer. The laser beam is then focused on an upper layer of the stacked layers, and the laser beam is scanned to anneal features in the upper layer. The laser has a wavelength of less than one micrometer. The beam size, depth of focus, energy dosage, and scan speed of the laser beam are programmable. Features in the lower layer are offset from features in the upper layer such that these features do not overlap along a plane parallel to a path of the laser beam. Each of the stacked layers includes active devices, such as transistors. Also, the first and second layers may be annealed simultaneously.
REFERENCES:
patent: 4318752 (1982-03-01), Tien
patent: 6670570 (2003-12-01), Giacobbe et al.
patent: 6852162 (2005-02-01), Jung
patent: 6961078 (2005-11-01), Yamate et al.
patent: 7015422 (2006-03-01), Timans
patent: 7176407 (2007-02-01), Hunter et al.
patent: 2003/0226834 (2003-12-01), Ishikawa et al.
patent: 2004/0115931 (2004-06-01), Liu et al.
patent: 2006/0086702 (2006-04-01), Smart
patent: 2006/0128073 (2006-06-01), Sun et al.
patent: 2006/0237397 (2006-10-01), Yamazaki et al.
patent: 2007/0187670 (2007-08-01), Hsu et al.
patent: 2007/0218657 (2007-09-01), Bet et al.
patent: 2008/0210667 (2008-09-01), Yang et al.
Chen Howard H.
Hsu Louis C.
Mok Lawrence S.
Scott J. Campbell
Carey, Rodriguez, Greenberg & Paul
Greenberg, Esq. Steven M.
International Business Machines - Corporation
Le Thao P.
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