Laser anneal of vertically oriented semiconductor structures...

Details Laser anneal of vertically oriented semiconductor structures... Laser anneal of vertically oriented semiconductor structures...

2005-12-16

2009-11-10

Purvis, Sue (Department: 2891)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

C438S166000, C438S237000, C438S328000, C438S486000, C438S487000, C438S799000, C257SE21134

Reexamination Certificate

active

07615502

ABSTRACT:
A method to laser anneal a silicon stack (or a silicon-rich alloy) including a heavily doped region buried beneath an undoped or lightly doped region is disclosed. By F selecting laser energy at a wavelength that tends to be transmitted by crystalline silicon and absorbed by amorphous silicon, crystallization progresses through the silicon layers in a manner that minimizes or prevents diffusion of dopants upward from the doped region to the undoped or lightly doped region. In preferred embodiments, the laser energy is pulsed, and a thermally conductive structure beneath the heavily doped layer dissipates heat, helping to control the anneal and limit dopant diffusion.

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